Hopping Conductivity in Single Crystals (Cd0.6Zn0.32Mn0.08)3As2 (RESEARCH NOTE)


1 Belgorod State National Research University, Department of General and Applied Physics, Belgorod, Russia

2 University of Asia Pacific, Department of Electrical and Electronic Engineering, Dhaka, Bangladesh

3 Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta, Finland

4 Ioffe Institute Russia, Laboratory of Kinetic Phenomena in a Solid at Low, Saint-Petersburg, Russia

5 Regional Centre of Nanotechnology, South-West State University, Kursk, Russia


The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this work, we  found the width of the coulomb D = 0.21 meV and a rigid gap δ = 0.026 meV in the density of localized states, concentration and localization radius of charge carriers.


1.     Harris, D.K., Allen, P.M., Han, H.-S., Walker, B.J., Lee, J. and Bawendi, M.G., "Synthesis of cadmium arsenide quantum dots luminescent in the infrared", Journal of the American Chemical Society,  Vol. 133, No. 13, (2011), 4676-4679.
2.     Wang, Z., Weng, H., Wu, Q., Dai, X. and Fang, Z., "Three-dimensional dirac semimetal and quantum transport in Cd 3 as 2", Physical Review B,  Vol. 88, No. 12, (2013), 125427.
3.     Borisenko, S., Gibson, Q., Evtushinsky, D., Zabolotnyy, V., Büchner, B. and Cava, R.J., "Experimental realization of a three-dimensional dirac semimetal", Physical Review Letters,  Vol. 113, No. 2, (2014), 27603-27612.
4.     Galeeva, A.V., Krylov, I.V., Drozdov, K.A., Knjazev, A.F., Kochura, A.V., Kuzmenko, A.P., Zakhvalinskii, V.S., Danilov, S.N., Ryabova, L.I. and Khokhlov, D.R., "Electron energy relaxation under terahertz excitation in (Cd1-xZnx)3As2 dirac semimetals", Beilstein Journal of Nanotechnology,  Vol. 8, (2017), 167-175.
5.     Aggarwal, L., Gaurav, A., Thakur, G.S., Haque, Z., Ganguli, A.K. and Sheet, G., "Unconventional superconductivity at mesoscopic point-contacts on the 3-dimensional dirac semi-metal Cd3As2", arXiv preprint arXiv:1410.2072,  (2014).
6.     Liang, T., Gibson, Q., Ali, M.N., Liu, M., Cava, R. and Ong, N., "Ultrahigh mobility and giant magnetoresistance in the dirac semimetal Cd3As2", Nature Materials,  Vol. 14, No. 3, (2015), 280-284.
7.     Wang, Q., Li, C.-Z., Ge, S., Li, J.-G., Lu, W., Lai, J., Liu, X., Ma, J., Yu, D.-P. and Liao, Z.-M., "Ultrafast broadband photodetectors based on three-dimensional dirac semimetal cd3as2", Nano Letters,  Vol. 17, No. 2, (2017), 834-841.
8.     Cisowski, J., "Semimagnetic semiconductors based on ii–v compounds", Physica Status Solidi (b),  Vol. 200, No. 2, (1997), 311-350.
9.     Zakhvalinskii, V., Nikulicheva, T., Lähderanta, E., Shakhov, M., Nikitovskaya, E. and Taran, S., "Anomalous cyclotron mass dependence on the magnetic field and berry’s phase in (Cd1−xy Zn x Mn y )3As2) solid solutions", Journal of Physics: Condensed Matter,  Vol. 29, No. 45, (2017), 455701.
10.   Shklovskii, B.I. and Efros, A.L., "Electronic properties of doped semiconductors, Springer Science & Business Media,  Vol. 45,  (2013).
11.   Laiho, R., Lisunov, K., Lähderanta, E., Petrenko, P., Salminen, J., Shakhov, M., Safontchik, M., Stamov, V., Shubnikov, M. and Zakhvalinskii, V., "Variable-range hopping conductivity in La1-xCaxMn1-yFeyO3: Evidence of a complex gap in density of states near the fermi level", Journal of Physics: Condensed Matter,  Vol. 14, No. 34, (2002), 8043-8050.
12.   Mott, N.F. and Davis, E.A., "Electronic processes in non-crystalline materials, OUP Oxford,  (2012).
13.   Laiho, R., Lashkul, A., Lisunov, K., Lähderanta, E., Shakhov, M. and Zakhvalinskii, V., "Hopping conductivity of ni-doped p-cdsb", Journal of Physics: Condensed Matter,  Vol. 20, No. 29, (2008), 295204-295214.