The range distributions of low-energy nitrogen and oxygen (2-3 keV) ions is silicon are measured and compared with these available in theories. The nitrogen distribution is very close to a Gaussian distribution as predicted by theory. The oxygen profile however, indicates a surface localized peak along with a shoulder and a long tail into the sample. The surface peak is beleived to he the result of radiation induced segregation and the position of the shoulder corresponds to the peak of the theoretical distribution, The peak position in both profiles is very close to those obtained from the theories.
Zomorrodian, A. R. (1999). Range Distributions of Low-energy Nitrogen and Oxygen Ions in Silicon (RESEARCH NOTE). International Journal of Engineering, 12(1), 45-48.
MLA
A. R. Zomorrodian. "Range Distributions of Low-energy Nitrogen and Oxygen Ions in Silicon (RESEARCH NOTE)". International Journal of Engineering, 12, 1, 1999, 45-48.
HARVARD
Zomorrodian, A. R. (1999). 'Range Distributions of Low-energy Nitrogen and Oxygen Ions in Silicon (RESEARCH NOTE)', International Journal of Engineering, 12(1), pp. 45-48.
VANCOUVER
Zomorrodian, A. R. Range Distributions of Low-energy Nitrogen and Oxygen Ions in Silicon (RESEARCH NOTE). International Journal of Engineering, 1999; 12(1): 45-48.
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