A Simple General-purpose I-V Model for All Operating Modes of Deep Submicron MOSFETs


Department of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran


A simple general-purpose I-V model for all operating modes of deep-submicron MOSFETs is presented. Considering the most dominant short channel effects with simple equations including few extra parameters, a reasonable trade-off between simplicity and accuracy is established. To further improve the accuracy, model parameters are optimized over various channel widths and full range of operating voltages using a heuristic optimization algorithm. The obtained results demonstrate only 1.28% and 0.97% average error in IBM 0.13um CMOS technology for NMOS and PMOS, respectively, comparing with the accurate physically-based BSIM3 model. Furthermore, the tolerance of the model accuracy against parameters variation is investigated.


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