TY - JOUR ID - 72988 TI - Bit Swapping Linear Feedback Shift Register For Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology (TECHNICAL NOTE) JO - International Journal of Engineering JA - IJE LA - en SN - 1025-2495 AU - Binti Mohd Hanib, N. AU - Choong, F. AU - Bin Ibne Reaz, M. AU - Kamal, N. AU - Badal, T. AD - Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, Bangi, Selangor, Malaysia AD - School of Engineering and Physical Science, Heriot-Watt University, Jalan Venna, Putrajaya, Malaysia. Y1 - 2017 PY - 2017 VL - 30 IS - 8 SP - 1126 EP - 1133 KW - bit swapping linear feedback shift register (BS KW - LFSR) KW - stacking technique KW - low power DO - N2 - Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three different architectures to enhance the feedback element used in BS-LFSR was explored. The pass transistor merged with transistor stack method yielded a better reduction in power dissipation compared to pass transistor design and NAND gate design. The BS-LFSR was designed in Mentor Graphic – TSMC Design Kit Environment using 130nm complementary metal oxide semiconductor (CMOS) technology. The proposed 4-bit BS-LFSR achieved an active area of 1241.1588um2 and consumed only 53.8844nW with total power savings of 19.43%. The proposed design showed superiority when compared with the conventional LFSR and related work in reducing power dissipation and area. UR - https://www.ije.ir/article_72988.html L1 - https://www.ije.ir/article_72988_4f2cf72c5c3ff9c9d2641f005417ce60.pdf ER -