@article { author = {Mousavi, S. S. and Ghasemi, J. and Gholami, M.}, title = {A High Gain and Forward Body Biastwo-stage Ultra-wideband Low Noise Amplifier with Inductive Feedback in 180 nm CMOS Process}, journal = {International Journal of Engineering}, volume = {31}, number = {9}, pages = {1553-1558}, year = {2018}, publisher = {Materials and Energy Research Center}, issn = {1025-2495}, eissn = {1735-9244}, doi = {}, abstract = {This paper presents a two-stage low-noise ultra-wideband amplifier to obtain high and smooth gain in 180nm CMOS Technology. The proposed structure has two common source stages with inductive feedback. First stage is designed about 3GHz frequency and second stage is designed about 8GHz. In simulation, symmetric inductors of TSMC 0.18um CMOS technology in ADS software is used.Simulations results show high and relatively smooth S21 equal to 18.674±1.38dB, noise figure of less than 3.7dB, power consumption of 14.6mW with 1.2v supply voltage and suitable matching at the input (S11}, keywords = {Low Noise Amplifier,UWB,Inductive feedback}, url = {https://www.ije.ir/article_73292.html}, eprint = {https://www.ije.ir/article_73292_261f88c34ca9fba5812b677964672a11.pdf} }