@article { author = {Binti Mohd Hanib, N. and Choong, F. and Bin Ibne Reaz, M. and Kamal, N. and Badal, T.}, title = {Bit Swapping Linear Feedback Shift Register For Low Power Application Using 130nm Complementary Metal Oxide Semiconductor Technology (TECHNICAL NOTE)}, journal = {International Journal of Engineering}, volume = {30}, number = {8}, pages = {1126-1133}, year = {2017}, publisher = {Materials and Energy Research Center}, issn = {1025-2495}, eissn = {1735-9244}, doi = {}, abstract = {Bit swapping linear feedback shift register (BS-LFSR) is employed in a conventional linear feedback shirt register (LFSR) to reduce its power dissipation and enhance its performance. In this paper, an enhanced BS-LFSR for low power application is proposed. To achieve low power dissipation, the proposed BS-LFSR introduced the stacking technique to reduce leakage current. In addition, three different architectures to enhance the feedback element used in BS-LFSR was explored. The pass transistor merged with transistor stack method yielded a better reduction in power dissipation compared to pass transistor design and NAND gate design. The BS-LFSR was designed in Mentor Graphic – TSMC Design Kit Environment using 130nm complementary metal oxide semiconductor (CMOS) technology. The proposed 4-bit BS-LFSR achieved an active area of 1241.1588um2 and consumed only 53.8844nW with total power savings of 19.43%. The proposed design showed superiority when compared with the conventional LFSR and related work in reducing power dissipation and area.}, keywords = {bit swapping linear feedback shift register (BS,LFSR),stacking technique,low power}, url = {https://www.ije.ir/article_72988.html}, eprint = {https://www.ije.ir/article_72988_4f2cf72c5c3ff9c9d2641f005417ce60.pdf} }