@article { author = {Grari, M. and Zoheir, C.}, title = {Numerical Modeling of Non-equilibrium Plasma Discharge of Hydrogenated Silicon Nitride (SiH4/NH3/H2)}, journal = {International Journal of Engineering}, volume = {33}, number = {8}, pages = {1440-1449}, year = {2020}, publisher = {Materials and Energy Research Center}, issn = {1025-2495}, eissn = {1735-9244}, doi = {10.5829/ije.2020.33.08b.01}, abstract = {In this work, we model a radiofrequency discharge of hydrogenated silicon nitride in a capacitive coupled plasma reactor using Maxwellian and non-Maxwellian electron energy distribution function. The purpose is to investigate whether there is a real advantage and a significant contribution using non-Maxwellian electron energy distribution function rather than Maxwellian one for determining the fundamental characteristics of a radiofrequency plasma discharge. The results show the evolution of the non-Maxwellian electron energy distribution function, the mobility and the diffusion coefficient required to determine the fundamental characteristics of the radiofrequency plasma discharge of a hydrogenated silicon nitride deposit at low pressure and low temperature, between the two electrodes of the capacitive coupled plasma reactor.  By comparing these results using non-Maxwellian electron energy distribution function with those calculated using the Maxwellian one, we conclude that the use of non-Maxwellian electronic energy distribution function is more efficient for describing the evolution of a radiofrequency plasma discharge in a capacitive reactor, which will improve the quality of the deposition of thin films.}, keywords = {Numerical modeling,Non-equilibrium Electron Energy,distribution function,Radio Frequency Plasma Discharge Silicon,Nitride Capacitive,Coupled Plasma Reactor}, url = {https://www.ije.ir/article_108499.html}, eprint = {https://www.ije.ir/article_108499_8ae1858324d2d265a7ee21c4be6b6079.pdf} }