Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Authors

1 Department of Electrical Engineering, School of Technology and Engineering, University of Qom, Qom, Iran

2 raduate Student, Department of Science, University of Qom, Qom, Iran

Abstract

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The physical aspects of the yielded dielectrics such as layer thickness and uniformity are presented as well.

Keywords