Numerical Modeling of non-Equilibrium Plasma Discharge of Hydrogenated Silicon Nitride (SiH4/NH3/H2)

Document Type: Original Article

Abstract

In this work, we model a radiofrequency discharge of hydrogenated silicon nitride in a capacitive coupled plasma reactor using Maxwellian and non-Maxwellian electron energy distribution function. The purpose is to investigate whether there is a real advantage and a significant contribution using non-Maxwellian electron energy distribution function rather than Maxwellian one for determining the fundamental characteristics of a radiofrequency plasma discharge. The results show the evolution of the non-Maxwellian electron energy distribution function, the mobility and the diffusion coefficient required to determine the fundamental characteristics of the radiofrequency plasma discharge of a hydrogenated silicon nitride deposit at low pressure and low temperature, between the two electrodes of the capacitive coupled plasma reactor. By comparing these results obtained using non-Maxwellian electron energy distribution function with those calculated using the Maxwellian one, we conclude that the use of non-Maxwellian electronic energy distribution function is more efficient for describing the evolution of a radiofrequency plasma discharge in a capacitive reactor, which will improve the quality of the deposition of thin films.

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