Abstract




 
   

IJE TRANSACTIONS C: Aspects Vol. 31, No. 9 (September 2018) 1553-1558    Article in Press

PDF URL: http://www.ije.ir/Vol31/No9/C/11-2906.pdf  
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  A HIGH GAIN AND FORWARD BODY BIASTWO-STAGE ULTRA-WIDEBAND LOW NOISE AMPLIFIER WITH INDUCTIVE FEEDBACK IN 180 NM CMOS PROCESS
 
S. S. Mousavi, J. Ghasemi and M. Gholami
 
( Received: January 30, 2018 – Accepted in Revised Form: August 17, 2018 )
 
 

Abstract    This paper presents a two-stage low-noise ultra-wideband amplifier to obtain the high and smooth gain in 180nm CMOS Technology. The proposed structure has two common source stages with inductive feedback. The first stage is designed for 3GHz frequency and the second stage is designed about 8GHz. In the simulation, symmetric inductors of TSMC 0.18um CMOS technology in ADS software is used. Simulation results show high and relatively smooth S21 equal to 18.674±1.38dB, the noise figure of less than 3.7dB, the power consumption of 14.6mW with 1.2V supply voltage and suitable matching at the input (S11<-10.8dB) in 3.1 to 10.6 GHz frequency range. Moreover, IIP3 of this circuit is -9.5dBm at the 7GHz frequency.

 

Keywords    Low Noise Amplifier, Ultra-Wideband, Inductive Feedback, High Gain

 

چکیده   

در این مقاله یک تقویت¬کننده کم¬نویز فوق پهن¬باند دو طبقه برای دستیابی به گین بالا و هموار در تکنولوژی 180 نانومتر معرفی شده است. ساختار پیشنهادی دارای دو طبقه تقویت¬کننده سورس¬مشترک همراه با فیدبک سلفی می¬باشد. طبقه اول حول فرکانسGHz 3 و طبقه دوم حول فرکانس GHz 8 طراحی شده است. درشبیه¬سازی از سلف¬های متقارن تکنولوژیTSMC 0.18um CMOS در نرم-افزار ADS استفاده شده است. نتایچ شبیه‌سازی S21 بالا و نسبتاً هموار dB 38/1±674/18، عدد نویز کمتر از dB 7/3، توان مصرفی 6/14 میلی وات با ولتاژ تغدیه 2/1 ولت و تطبیق مناسب در ورودی (S11<-10 dB) را در گستره فرکانسی 1/3 تا 6/10 گیگاهرتز نشان می-دهد. همچنین این مدار دارای IIP3 برابر dBm 5/9- در فرکانس 7 گیگاهرتز می¬باشد.

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