TY - JOUR ID - 108499 TI - Numerical Modeling of Non-equilibrium Plasma Discharge of Hydrogenated Silicon Nitride (SiH4/NH3/H2) JO - International Journal of Engineering JA - IJE LA - en SN - 1025-2495 AU - Grari, M. AU - Zoheir, C. AD - Mohamed first University, Department of Physics, LETSER Laboratory, Oujda, Morocco Y1 - 2020 PY - 2020 VL - 33 IS - 8 SP - 1440 EP - 1449 KW - Numerical modeling KW - Non-equilibrium Electron Energy KW - distribution function KW - Radio Frequency Plasma Discharge Silicon KW - Nitride Capacitive KW - Coupled Plasma Reactor DO - 10.5829/ije.2020.33.08b.01 N2 - In this work, we model a radiofrequency discharge of hydrogenated silicon nitride in a capacitive coupled plasma reactor using Maxwellian and non-Maxwellian electron energy distribution function. The purpose is to investigate whether there is a real advantage and a significant contribution using non-Maxwellian electron energy distribution function rather than Maxwellian one for determining the fundamental characteristics of a radiofrequency plasma discharge. The results show the evolution of the non-Maxwellian electron energy distribution function, the mobility and the diffusion coefficient required to determine the fundamental characteristics of the radiofrequency plasma discharge of a hydrogenated silicon nitride deposit at low pressure and low temperature, between the two electrodes of the capacitive coupled plasma reactor.  By comparing these results using non-Maxwellian electron energy distribution function with those calculated using the Maxwellian one, we conclude that the use of non-Maxwellian electronic energy distribution function is more efficient for describing the evolution of a radiofrequency plasma discharge in a capacitive reactor, which will improve the quality of the deposition of thin films. UR - https://www.ije.ir/article_108499.html L1 - https://www.ije.ir/article_108499_8ae1858324d2d265a7ee21c4be6b6079.pdf ER -